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APT20GF120BR Datasheet, PDF (5/5 Pages) Advanced Power Technology – The Fast IGBT is a new generation of high voltage power IGBTs.
APT20GF120BR
A
B
10%
td(on)
VC
90%
VC
tr
10%
IC
90%
td(off)
IC
D.U.T.
VCE ( S A T )
Eon
tf
t=2uS
90%
10%
Eoff
VCHARGE
A
100uH
*DRIVER SAME TYPE AS D.U.T.
VCC = 0.66 VCES
Ets = Eon + Eoff
VC
IC
VCLAMP
B
RG
A
DRIVER*
D.U.T.
Figure 15, Switching Loss Test Circuit and Waveforms
2 VCE(off)
90%
10%
1 VGE(off)
td(on)
VGE(on)
VCE(on)
tr
td(off)
tf
From
Gate Drive
Circuitry
RG
1
Figure 16, Resistive Switching Time Test Circuit and Waveforms
VCC
RL =
.5 VCES
I C2
2
D.U.T.
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
T0-247 Package Outline
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
5.38 (.212)
6.20 (.244)
3.50 (.138)
3.81 (.150)
0.40 (.016)
0.79 (.031)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Collector
Emitter
APT's devices are covered by one or more of the following U.S.patents:
4,895,810 5,045,903
5,256,583 4,748,103
5,089,434 5,182,234 5,019,522 5,262,336
5,283,202 5,231,474 5,434,095 5,528,058