APT20GF120BR Datasheet, PDF (2/5 Pages) Advanced Power Technology – The Fast IGBT is a new generation of high voltage power IGBTs.

DYNAMIC CHARACTERISTICS
Symbol Characteristic
C_ies
C_oes
C_res
Q_g
Q_ge
Q_gc
t_d(on)
t_r
t_d(off)
t_f
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
t_d(on)
t_r
t_d(off)
t_f
E_ts
gfe
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge ³
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses
Forward Transconductance
Test Conditions
MIN
Capacitance
V_GE = 0V
V_CE = 25V
f = 1 MHz
Gate Charge
V_GE = 15V
V_CC = 0.5V_CES
I_C = I_C2
Resistive Switching (25°C)
V_GE = 15V
V_CC = 0.5V_CES
I_C = I_C2
R_G = 10W
Inductive Switching (150°C)
V_CLAMP(Peak) = 0.66V_CES
V_GE = 15V
I_C = I_C2
R_G = 10W
T_J = +150°C
Inductive Switching (25°C)
V_CLAMP(Peak) = 0.66V_CES
V_GE = 15V
I_C = I_C2
R_G = 10W
T_J = +25°C
V_CE = 20V, I_C = I_C2
APT20GF120BR
TYP
1050
100
63
95
13
62
15
67
92
93
17
30
105
71
1.3
1.5
2.7
17
35
93
70
2.4
12
MAX
1210
150
110
140
20
90
30
130
140
190
34
60
160
140
3.0
3.0
5.0
30
70
140
140
5.0
UNIT
pF
nC
ns
ns
mJ
ns
mJ
S
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic
MIN
R_QJC
R_QJA
Junction to Case
Junction to Ambient
W_T Package Weight
Torque Mounting Torque (using a 6-32 or 3mm Binding Head Machine Screw)
1 _{Repetitive Rating: Pulse width limited by maximum junction temperature.}
2 _{IC = IC2, RGE = 25W, L = 110µH, Tj = 25°C}
3 _{See MIL-STD-750 Method 3471}
APT Reserves the right to change, without notice, the specifications and information contained herein.
TYP
0.22
6.1
MAX
0.63
40
10
1.1
UNIT
°C/W
oz
gm
lb•in
N•m