APT20GF120BR Datasheet, PDF (3/5 Pages) Advanced Power Technology – The Fast IGBT is a new generation of high voltage power IGBTs.

APT20GF120BR
50
40
V_GE=17 & 15V
13V
50
V_GE=17 & 15V
13V
40
30
30
11V
11V
20
20
10
9V
0
7V
0
4
8
12
16
20
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 1, Typical Output Characteristics (T_J = 25°C)
60
250µSec. Pulse Test
V_GE = 15V
40
T_C=-55°C
T_C=+25°C
30
T_C=+150°C
20
10
0
0
2
4
6
8
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 3, Typical Output Characteristics @ V_GE = 15V
2,000
1,000
C_ies
500
100
f = 1MHz
C_oes
50
C_res
10
9V
0
7V
0
4
8
12
16
20
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 2, Typical Output Characteristics (T_J = 150°C)
100
50 OPERATION
LIMITED
BY
V_CE (SAT)
100µS
10
5
T_C =+25°C
T_J =+150°C
SINGLE PULSE
1mS
1
1
5 10
50 100
1200
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 4, Maximum Forward Safe Operating Area
10mS
20
I_C = I_C2
T_J = +25°C
16
12
V_CE=240V
8
V_CE=600V
4
10
0.01
0.1
1.0
10
50
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 5, Typical Capacitance vs Collector-To-Emitter Voltage
1.0
0.5
D=0.5
0
0
40
80
120
160
Q_g, TOTAL GATE CHARGE (nC)
Figure 6, Gate Charges vs Gate-To-Emitter Voltage
0.1
0.05
0.01
0.005
0.00110_-5
0.2
0.1
0.05
0.02
0.01
Note:
t1
SINGLE PULSE
t2
Duty Factor D = ^t1/t2
Peak TJ = PDM x Z_θJC + TC
10^-4
10^-3
10^-2
10^-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration