APT20GF120BR Datasheet, PDF (4/5 Pages) Advanced Power Technology – The Fast IGBT is a new generation of high voltage power IGBTs.

APT20GF120BR
5.0
40
4.0
30
I_C1
2.0
I_C2
20
1.5
0.5 I_C2
10
1.0-50 _{-25 0 25 50 75 100 125 150}
T_J, JUNCTION TEMPERATURE (°C)
Figure 8, Typical V_CE(SAT) Voltage vs Junction Temperature
1.2
1.1
1
0.9
0.8
0.7-50 _{-25 0 25 50 75 100 125 150}
T_J, JUNCTION TEMPERATURE (°C)
Figure 10, Breakdown Voltage vs Junction Temperature
10
I_C1
I_C2
1
0.5 I_C2
V_CC = 0.66 V_CES
V_GE = +15V
R_G = 10 W
0.1-50 _{-25 0 25 50 75 100 125 150}
T_J, JUNCTION TEMPERATURE (°C)
Figure 12, Typical Switching Energy Losses vs. Junction Temperature
100
10
0 ₂₅
50
75
100
125
150
T_C, CASE TEMPERATURE (°C)
Figure 9, Maximum Collector Current vs Case Temperature
5.0
V_CC = 0.66 V_CES
V_GE = +15V
T_J = +25°C
4.0
I_C = I_C2
E_off
3.0
2.0
E_on
1.0
00
20
40
60
80
100
R_G, GATE RESISTANCE (OHMS)
Figure 11, Typical Switching Energy Losses vs Gate Resistance
1.6
V_CC = 0.66 V_CES
V_GE = +15V
T_J = +125°C
R_G = 10 W
1.2
E_off
0.8
E_on
0.4
00
4
8
12
16
20
I_C, COLLECTOR CURRENT (AMPERES)
Figure 13, Typical Switching Energy Losses vs Collector Current
For Both:
Duty Cycle = 50%
T_J = +125°C
T_sink = +90°C
Gate drive as specified
Power dissapation = 56W
I_LOAD = I_RMS of fundamental
1
0.1
1.0
10
100
F, FREQUENCY (KHz)
Figure 14,Typical Load Current vs Frequency
1000