APT33GF120BR Datasheet, PDF (4/5 Pages) Advanced Power Technology – Fast IGBT

APT33GF120BR
5.0
60
4.0
I_C1
40
2.0
I_C2
0.5 I_C2
20
1.5
1.0-50 _{-25 0 25 50 75 100 125 150}
T_J, JUNCTION TEMPERATURE (°C)
Figure 8, Typical V_CE(SAT) Voltage vs Junction Temperature
1.2
1.1
1
0.9
0.8
0.7
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 10, Breakdown Voltage vs Junction Temperature
20
I_C1
1
I_C2
0.5 I_C2
V_CC = 0.66 V_CES
V_GE = +15V
R_G = 10 Ω
0.1
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 12, Typical Switching Energy Losses vs. Junction Temperature
100
10
0
25
50
75 100 125 150
T_C, CASE TEMPERATURE (°C)
Figure 9, Maximum Collector Current vs Case Temperature
16
V_CC = 0.66 V_CES
V_GE = +15V
T_J = +25°C
12
I_C = I_C2
8
E_off
4
E_on
0
0
20
40
60
80
100
R_G, GATE RESISTANCE (OHMS)
Figure 11, Typical Switching Energy Losses vs Gate Resistance
4
V_CC = 0.66 V_CES
V_GE = +15V
T_J = +125°C
3
R_G = 10 Ω
2
E_off
1
E_on
0
0
10
20
30
40
I_C, COLLECTOR CURRENT (AMPERES)
Figure 13, Typical Switching Energy Losses vs Collector Current
For Both:
Duty Cycle = 50%
T_J = +125°C
T_sink = +90°C
Gate drive as specified
Power dissapation = 83W
I_LOAD = I_RMS of fundamental
1
0.1
1.0
10
100
F, FREQUENCY (KHz)
Figure 14,Typical Load Current vs Frequency
1000