APT33GF120BR Datasheet, PDF (2/5 Pages) Advanced Power Technology – Fast IGBT

DYNAMIC CHARACTERISTICS (IGBT)
Symbol Characteristic
C_ies
C_oes
C_res
Q_g
Q_ge
Q_gc
t_d(on)
t_r
t_d(off)
t_f
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
t_d(on)
t_r
t_d(off)
t_f
E_ts
gfe
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge ³
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses
Forward Transconductance
APT33GF120BR
Test Conditions
MIN
Capacitance
V_GE = 0V
V_CE = 25V
f = 1 MHz
Gate Charge
V_GE = 15V
V_CC = 0.5V_CES
I_C = I_C2
Resistive Switching (25°C)
V_GE = 15V
V_CC = 0.8V_CES
I_C = I_C2
R_G =10Ω
Inductive Switching (150°C)
V_CLAMP(Peak) = 0.66V_CES
V_GE = 15V
I_C = I_C2
R_G = 10Ω
T_J = +150°C
Inductive Switching (25°C)
V_CLAMP(Peak) = 0.66V_CES
V_GE = 15V
I_C = I_C2
R_G = 10Ω
T_J = +25°C
V_CE = 20V, I_C = 25A
8.5
TYP
1855
230
110
170
19
100
24
85
170
125
25
60
210
74
2.8
2.8
5.6
27
65
190
70
5.2
20
MAX UNIT
pF
nC
ns
ns
mJ
ns
mJ
S
THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED)
Symbol Characteristic
R_ΘJC
R_ΘJA
Junction to Case
Junction to Ambient
W_T
Package Weight
MIN TYP MAX UNIT
0.42
°C/W
40
0.22
oz
5.90
gm
1 _{Repetitive Rating: Pulse width limited by maximum junction temperature.}
2 _{IC = IC2, VCC = 50V, RGE = 25Ω, L = 120µH, Tj = 25°C}
3 _{See MIL-STD-750 Method 3471}
APT Reserves the right to change, without notice, the specifications and information contained herein.