APT33GF120BR Datasheet, PDF (3/5 Pages) Advanced Power Technology – Fast IGBT

60
12V
V_GE=17, 15 & 13V
40
11V
APT33GF120BR
60
12V
V_GE=17, 15 & 13V
11V
40
10V
20
9V
8V
0
7V
0
4
8
12
16
20
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 1, Typical Output Characteristics (T_J = 25°C)
80
250µSec. Pulse Test
V_GE = 15V
60
T_C=-55°C
T_C=+25°C
T_C=+150°C
40
20
0
0
2
4
6
8
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 3, Typical Output Characteristics @ V_GE = 15V
3,000
C_ies
1,000
f = 1MHz
C_oes
100
C_res
10V
20
9V
8V
0
7V
0
4
8
12
16
20
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 2, Typical Output Characteristics (T_J = 150°C)
100
OPERATION
LIMITED
BY
V_CE (SAT)
100µs
10
1ms
T_C =+25°C
T_J =+150°C
SINGLE PULSE
1
1
10
100
1200
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 4, Maximum Forward Safe Operating Area
10ms
20
I_C = I_C2
T_J = +25°C
16
V_CE=240V
12
V_CE=600V
V_CE=960V
8
4
10
.01
0.1
1.0
10
50
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 5, Typical Capacitance vs Collector-To-Emitter Voltage
0.5
D=0.5
0
0
50 100 150 200 250
Q_g, TOTAL GATE CHARGE (nC)
Figure 6, Gate Charges vs Gate-To-Emitter Voltage
0.1
0.2
0.05
0.1
0.05
0.01
0.02
0.01
Note:
t1
0.005
t2
Duty Factor D = ^t1/t2
SINGLE PULSE
Peak TJ = PDM x Z_θJC + TC
0.001
10^-5
10^-4
10^-3
10^-2
10^-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration