APT33GF120BR Datasheet, PDF (1/5 Pages) Advanced Power Technology – Fast IGBT

APT33GF^AP1^T32^3G0^F1B²⁰R^BR
1200V 52A
Fast IGBT
The Fast IGBT is a new generation of high voltage power IGBTs. Using
Non-Punch Through Technology the Fast IGBT offers superior ruggedness,
fast switching speed and low Collector-Emitter On voltage.
• Low Forward Voltage Drop
• Low Tail Current
• RBSOA and SCSOA Rated
• High Freq. Switching to 20KHz
• Ultra Low Leakage Current
TO-247
C
G
C
E
G
E
MAXIMUM RATINGS (IGBT)
Symbol Parameter
All Ratings: T_C = 25°C unless otherwise specified.
APT33GF120BR
UNIT
V_CES
V_CGR
V_GE
I_C1
I_C2
I_CM
I_LM
E_AS
P_D
T_J,T_STG
T_L
Collector-Emitter Voltage
Collector-Gate Voltage (R_GE = 20KΩ)
Gate Emitter Voltage
Continuous Collector Current @ T_C = 25°C
Continuous Collector Current @ T_C = 105°C
Pulsed Collector Current ¹ @ T_C = 25°C
RBSOA Clamped Inductive Load Current @ R_G = 11Ω T_C = 125 °C
Single Pule Avalanche Energy ²
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
1200
1200
±20
52
33
104
66
65
297
-55 to 150
300
Volts
Amps
mJ
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS (IGBT)
Symbol Characteristic / Test Conditions
BV_CES
V_GE(TH)
V_CE(ON)
I _CES
I _GES
Collector-Emitter Breakdown Voltage (V_GE = 0V, I _C = 0.5mA)
Gate Threshold Voltage (V_CE = V_GE, I_C = 700µA, T_j = 25°C)
Collector-Emitter On Voltage (V_GE = 15V, I_C = 25A, T_j = 25°C)
Collector-Emitter On Voltage (V_GE = 15V, I_C = 25A, T_j = 125°C)
Collector Cut-off Current (V_CE = V_CES, V_GE = 0V, T_j = 25°C)
Collector Cut-off Current (V_CE = V_CES, V_GE = 0V, T_j = 125°C)
Gate-Emitter Leakage Current (V_GE = ±20V, V_CE = 0V)
MIN TYP MAX UNIT
1200
4.5 5.5 6.5
Volts
2.7 3.2
3.3 3.9
0.5
mA
5.0
±100 nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com