AMIS30623C623BRG Datasheet, PDF (9/61 Pages) ON Semiconductor – Micro-stepping Motor Driver

AMIS−30623
TxD
t_BIT
t_BIT
50%
t
LIN
t_{BUS_dom(max)}
t_{BUS_rec(min)}
TH_Rec(max)
TH_Dom(max)
TH_Rec(min)
TH_Dom(min)
Thresholds
receiver 1
Thresholds
receiver 2
t
RxD
t_{BUS_dom(min)}
t_{BUS_rec(max)}
(receiver 2)
50%
t_{rx_pdf}
t_{rx_pdr}
t
Figure 5. Timing Diagram for AC Characteristics According to LIN 2.0 & 2.1
Typical Application
V_BAT
Connect
to V_BAT
or GND
LIN bus
C₈
100 nF
C₇
100 mF
220 nF ^{C6 220 nF}
C₃
100 nF
C₄
100 nF
CPN ^C5 CPP VCP VBB
VBB
VDD ⁹
10 11
12
3
1 mF C₉
19
1k
20
SWI _C2
HW0
1
18 ^MOTXP
HW1
2
AMIS−30623
16 ^MOTXN
1k
HW2
8
C₁
2,7 nF
15 ^MOTYP
LIN
6
13 ^MOTYN
VDR 27 V
5
4
7
14 17
C₁₀
TST
GND
Figure 6. Typical Application Diagram for SO Device
2,7 nF
M
NOTES: All resistors are ± 5%, 1/4 W
C₁, C₂ minimum value is 2.7 nF, maximum value is 10 nF
Depending on the application, the ESR value and working voltage of C₇ must be carefully chosen
C₃ and C₄ must be close to pins V_BB and GND
C₅ and C₆ must be as close as possible to pins CPN, CPP, VCP, and V_BB to reduce EMC radiation
C₉ must be a ceramic capacitor to assure low ESR
C₁₀ is placed for EMC reasons; value depends on EMC requirements of the application
Connect
to V_BAT
or GND
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