SSM2932 Datasheet, PDF (3/16 Pages) Analog Devices – High Efficiency, Ground-Referenced

Data Sheet
SPECIFICATIONS
PVDD = 3.0 V, CCF = 1 μF, CCPVDD = CCPVSS = 2.2 μF, RL = 32 Ω, TA = 25°C, unless otherwise noted.
Table 1.
Parameter
DEVICE CHARACTERISTICS
Voltage Gain
Output Power
Symbol
AV
PO
Total Harmonic Distortion Plus Noise
Gain Matching
Frequency Range
Differential Input Impedance
CHARGE PUMP
Oscillator Frequency
Headphone Amplifier Supply
Positive Rail
THD + N
ΔAV
ZIN
fOSC0
fOSC1
VCPVDD
Negative Rail
VCPVSS
Output Voltage Threshold
Charge Pump Transition Time
VTH1
VTH2
tRELEASE
tATTACK
NOISE PERFORMANCE
Output Voltage Noise
Signal-to-Noise Ratio
Pop-and-Click Noise
Channel Separation
OUTPUT CHARACTERISTICS
Output Offset Voltage
Capacitive Output Drive
Slew Rate
STARTUP AND SHUTDOWN
Start-Up Time
Shutdown Time
POWER SUPPLY
Supply Voltage Range
Quiescent Current
Shutdown Current
Power Supply Rejection Ratio
en
SNR
VCP
XTALK
|VOS|
CLOAD
SR
tSU
tSD
PVDD
IDD
ISD
PSRR
Test Conditions/Comments
Min
Input voltage = 100 mV rms
GAIN pin high
GAIN pin low
f = 1 kHz, THD = 1%
RL = 16 Ω, one channel
RL = 32 Ω, one channel
RL = 16 Ω, stereo
RL = 32 Ω, stereo
PO = 10 mW per channel
Ripple within ±0.5 dB
20
12
Idle mode, VOUT = 0 V
Active mode
Efficiency mode: VOUT < 0.2 V rms
High power mode: VOUT > 0.2 V rms
Efficiency mode: VOUT < 0.2 V rms
High power mode: VOUT > 0.2 V rms
Transition from efficiency mode to high
power mode
Transition from high power mode to
efficiency mode
Charge pump transition from high power
mode to efficiency mode
Charge pump transition from efficiency
mode to high power mode
BW = 20 kHz, A-weighted, gain = 0 dB
A-weighted
Single-ended, 1 V rms, PO = 31 mW
Measured from SD rising edge
0°C < TA < 70°C
Guaranteed from PSRR test
2.5
RL = 32 Ω + 200 pF; gain = 0 dB, PVDD = 3 V
SD = GND
VRIPPLE = 100 mVPEAK, gain = 0 dB
f = 217 Hz
f = 1 kHz
f = 10 kHz
SSM2932
Typ
Max
Unit
6
dB
0
dB
85
mW
50
mW
40
mW
45
mW
0.01
%
1
%
20,000 Hz
18
34.5
kΩ
54
kHz
550
kHz
PVDD/2
V
2.2
V
−PVDD/2
V
−2.2
V
285
mV
375
mV
0.8
ms
10
μs
12
μV rms
98
dB
−60
dBV
86
dB
0.25
mV
150
pF
1.25
V/μs
20
ms
36
μs
3.6
V
1.7
mA
1
μA
90
dB
84
dB
62
dB
Rev. 0 | Page 3 of 16