OP215 Datasheet, PDF (3/8 Pages) Analog Devices – Dual Precision JFET-Input Operational Amplifier

OP215
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS (at VS = ±15 V, 0؇C Յ TA Յ 70؇C for E Grade, –40؇C Յ TA Յ +85؇C for G Grade, unless
otherwise noted.)
Parameter
Symbol Conditions
OP215E
Min Type Max
OP215G
Min Type Max
Unit
Input Offset Voltage
Average Input Offset
Voltage Drift
Without External Trim¹
With External Trim
Input Offset Current²
V_OS
TCV_OS
TCV_OSn
I_OS
Input Bias Current²
I_S
R_S = 50 W
R_P = 100 kW
T_j = 70∞C
T_A = 70∞C
Device Operating
T_j = 70∞C
T_A = 70∞C
Device Operating
0.4 1.65
3
15
3
0.06 0.45
0.08 0.80
± 0.12 ± 0.70
± 0.16 ± 1.40
3.5 8.0
mV
6
4
0.08 0.65
0.10 1.2
␮V/∞C
␮V/∞C
nA
nA
± 0.14 ± 0.9 nA
± 0.19 ± 1.8 nA
Input Voltage Range IVR
10.2 14.7
–10.2 –11.4
10.1 14.7
V
–10.1 –11.3
V
Common-Mode
Rejection Ratio
CMRR V_CM = ± IVR
80
98
76
94
dB
Power Supply Rejection PSRR
Ratio
V_S = ± 10 V to ± 16 V
V_S = ± 10 V to ± 15 V
13
100
20
159 ␮V/V
Large-Signal
Voltage Gain
A_VO
R_L Ն 2 kW
V_O = ± 10 V
50
180
35
130
V/mV
Output Voltage Swing V_O
R_L Ն 10 kW
± 12 ± 13
± 12 ± 13
V
NOTES
1_{Sample tested.}
2_{Input bias current is specified for two different conditions. The Tj = 25∞C specification is with the junction at ambient temperature; the Device Operating specification is}
with the device operating in a warmed up condition at 25∞C ambient. The warmed up bias-current value is correlated to the junction temperature value via the curves
of I_S versus T_j and I_S versus T_A. PMI has a bias-current compensation circuit that gives improved bias current and bias current over temperature versus standard
JFET input op amps. I_S and I_OS are measured at V_CM = 0.
Specifications are subject to change without notice.
REV. A
–3–