AAT8640 Datasheet, PDF (8/25 Pages) Advanced Analog Technology, Inc. – ONE-CELL LI-ION BATTERY PROTECTION IC

Advanced Analog Technology, Inc.
AAT8640 Series
AAT8640E DETECTION VOLTAGE AND DELAY TIME (25℃)
PARAMETER
SYMBOL TEST CONDITION MIN
Over Charge Threshold Voltage
V _C1
Detect Rising Edge of Supply
Voltage
4.230
Over Charge Release Voltage
V_C2
Detect Falling
Voltage
Edge
of
Supply
V_C1-0.30
Over Discharge Threshold
Voltage
V _D1
Detect Falling Edge of Supply
Voltage
2.201
Over Discharge Release Voltage
Over Charge Delay Time
Over Discharge Delay Time
V_D2
Detect Rising Edge of Supply
Voltage
V_D1+0.5
t _C1
V_DD = 3.6V to 4.5V
0.700
t _D1
V_DD = 3.6V to 2.2V
87.5
Detect Rising Edge of “VN” Pin
Over Current Level 1 Detection
Voltage
V_OC1
Voltage ( D _out Response with t_OC1
80
Delay Time)
Over Current Level 2 Detection
Voltage
Short Circuit Detection Voltage
V_OC2
V_short
Detect Rising Edge of “VN”
Pin Voltage ( D_out Response
with t_OC2 Delay Time)
V_DD = 3.0V , Detect Rising Edge
of “VN” Pin Voltage ( D _out
Response with t _short Delay
Time)
400
V_DD −1.7
Over Current Level 1 Detection
Delay Time
t _OC1
V_DD = 3.0V
5.6
Room Temp. ⇒
1.4
Over Current Level 2 Detection
Delay Time
t _OC2
Low or High Temp. ⇒
V_DD = 3.0V
1.1
Short Circuit Detection Delay
Time
t _short
V_DD = 3.0V
Charger Detection Voltage
C _out High Level Resistance
C _out Low Level Resistance
D_out High Level Resistance
V_CHR
R _COH
R _COL
R _DOH
Detect Rising Edge of “ D_out ”
Pin Voltage
-2.0
(when V_D1＜V_DD＜V_D2)
V_DD = 3.5V ;
C_out = 3.0V ; VN = 0V
1
V_DD = 4.5V ;
C_out = 0.5V ; VN = 0V
150
V_DD = 3.5V ; D _out = 3.0V ;
2.5
VN = 0V
D _out Low Level Resistance
R _DOL
V_DD = 1.8V ; D _out = 0.5V ;
VN = 1.8V
2.5
Internal Resistance between VN
and V_DD
R _VND
V_DD = 1.8V ; VN = 0V
100
Internal Resistance between VN
and GND
R _VNG
V_DD = 3.5V ; VN = 3.5V
50
TYP
4.280
V_C1-0.20
2.281
V_D1+0.6
1.000
125.0
100
480
V_DD −1.3
8.0
2.0
2.0
10
-1.3
2
602
5.0
5.0
300
150
MAX UNIT
4.330
V
V_C1-0.10 V
2.361
V
V_D1+0.7 V
1.300
s
162.5 ms
120
mV
600
mV
V_DD −0.9
V
10.4
ms
2.6
ms
3.4
ms
50
μs
-0.6
V
10
kΩ
2,380 kΩ
10.0
kΩ
10.0
kΩ
900
kΩ
300
kΩ
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