AAT8640 Datasheet, PDF (4/25 Pages) Advanced Analog Technology, Inc. – ONE-CELL LI-ION BATTERY PROTECTION IC

Advanced Analog Technology, Inc.
AAT8640 Series
AAT8640A DETECTION VOLTAGE AND DELAY TIME ( 25^οC )
PARAMETER
SYMBOL TEST CONDITION MIN TYP
Over Charge Threshold Voltage
V _C1
Detect Rising Edge of Supply
Voltage
4.275 4.325
Over Charge Release Voltage
V_C2
Detect Falling Edge of Supply
Voltage
V_C1-0.35 V_C1-0.25
Over Discharge Threshold
Voltage
V _D1
Detect Falling Edge of Supply
Voltage
2.420 2.500
Over Discharge Release Voltage
V_D2
Detect Rising Edge of Supply
Voltage
V_D1+0.3 V_D1+0.4
Over Charge Delay Time
t _C1
V_DD = 3.6V to 4.5V
0.700 1.000
Over Discharge Delay Time
t _D1
V_DD = 3.6V to 2.4V
87.5 125.0
Detect Rising Edge of “VN” Pin
Over Current Level 1 Detection
Voltage
V_OC1
Voltage ( D _out Response with t_{OC1 130}
150
Delay Time)
Over Current Level 2 Detection
Voltage
Short Circuit Detection Voltage
V_OC2
V_short
Detect Rising Edge of “VN”
Pin Voltage ( D_out Response
400
with t_OC2 Delay Time)
V_DD = 3.0V , Detect Rising Edge
of “VN” Pin Voltage ( D _out
Response with t _short Delay
V_DD −1.7
Time)
500
V_DD −1.3
Over Current Level 1 Detection
Delay Time
t _OC1
V_DD = 3.0V
Room Temp. ⇒
Over Current Level 2 Detection
Delay Time
t _OC2
Low or High Temp. ⇒
V_DD = 3.0V
5.6
8.0
1.4
2.0
1.1
2.0
Short Circuit Detection Delay
Time
t _short
V_DD = 3.0V
10
Charger Detection Voltage
C _out High Level Resistance
Detect Rising Edge of “ D_out ”
V_CHR
Pin Voltage (when V_D1＜V_DD＜ ^−2.0
−1.3
V_D2)
R _COH
V_DD = 3.5V ; C _out = 3.0V ;
VN = 0V
1
2
C_out Low Level Resistance
D_out High Level Resistance
R _COL
R _DOH
V_DD = 4.5V ;
C_out = 0.5V ; VN = 0V
V_DD = 3.5V ; D _out = 3.0V ;
VN = 0V
150
602
2.5
5.0
D _out Low Level Resistance
R _DOL
V_DD = 1.8V ;
D _out = 0.5V ; VN = 1.8V
2.5
5.0
Internal Resistance between VN
and V_DD
R _VND
V_DD = 1.8V ; VN = 0V
100
300
Internal Resistance between VN
and GND
R _VNG
V_DD = 3.5V ; VN = 3.5V
50
150
MAX UNIT
4.375
V
V_C1-0.15 V
2.580
V
V_D1+0.5 V
1.300
s
162.5 ms
170
mV
600
mV
V_DD −0.9
V
10.4
ms
2.6
ms
3.4
ms
50
μs
−0.6
V
10
kΩ
2,380 kΩ
10.0
kΩ
10.0
kΩ
900
kΩ
300
kΩ
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