AAT8640 Datasheet, PDF (12/25 Pages) Advanced Analog Technology, Inc. – ONE-CELL LI-ION BATTERY PROTECTION IC

Advanced Analog Technology, Inc.
AAT8640 Series
AAT8640I DETECTION VOLTAGE AND DELAY TIME (25℃)
PARAMETER
SYMBOL TEST CONDITION MIN TYP MAX UNIT
Over Charge Threshold Voltage
V _C1
Detect Rising Edge of Supply
Voltage
4.250 4.300 4.350 V
Over Charge Release Voltage
V_C2
Detect Falling Edge of Supply
Voltage
V_C1-0.30 V_C1-0.20 V_C1-0.10
V
Over Discharge Threshold
Voltage
V _D1
Detect Falling Edge of Supply
Voltage
2.220 2.300 2.380
V
Over Discharge Release Voltage
V_D2
Detect Rising Edge of Supply
Voltage
V_D1-0.08 V_D1 V_D1+0.08 V
Over Charge Delay Time
Over Discharge Delay Time
t _C1
V_DD = 3.6V to 4.5V
t _D1
V_DD = 3.6V to 2.2V
0.700 1.000 1.300 s
87.5 125.0 162.5 ms
Detect Rising Edge of “VN” Pin
Over Current Level 1 Detection
Voltage
V_OC1
Voltage ( D _out Response with t_{OC1 110}
130
150 mV
Delay Time)
Over Current Level 2 Detection
Voltage
Short Circuit Detection Voltage
Over Current Level 1 Detection
Delay Time
Over Current Level 2 Detection
Delay Time
Short Circuit Detection Delay
Time
V_OC2
V_short
t _OC1
t _OC2
t _short
Detect Rising Edge of “VN”
Pin Voltage ( D_out Response
400
490
600 mV
with t_OC2 Delay Time)
V_DD = 3.0V , Detect Rising Edge
of “VN” Pin Voltage ( D _out
Response with t _short Delay
V_DD −1.7 V_DD −1.3 V_DD −0.9 _V
Time)
V_DD = 3.0V
5.6
8.0 10.4 ms
Room Temp. ⇒
Low or High Temp. ⇒
V_DD = 3.0V
V_DD = 3.0V
1.4
2.0
2.6
ms
1.1
2.0
3.4
ms
10
50
μs
Charger Detection Voltage
C _out High Resistance Level
C _out Low Resistance Level
D_out High Resistance Level
D _out Low Resistance Level
V_CHR
R _COH
R _COL
R _DOH
R _DOL
Detect Rising Edge of “ D_out ”
Pin Voltage
−2.0
(when V_D1＜V_DD＜V_D2)
V_DD = 3.5V ;
C_out = 3.0V ;VN=0V
1
V_DD = 4.5V ;
C_out = 0.5V ;VN=0V
150
V_DD = 3.5V ;
D _out = 3.0V ;VN=0V
2.5
V_DD = 1.8V ;
D _out = 0.5V ;VN=1.8V
2.5
−1.3 −0.6
V
2
10
kΩ
602 2,380 kΩ
5.0
10.0 kΩ
5.0
10.0 kΩ
Internal Resistance between VN
and V_DD
R _VND
V_DD = 1.8V ; VN=0V
100
300
900 kΩ
Internal Resistance between VN
and GND
R _VNG
V_DD = 3.5V ; VN=3.5V
50
150
300
kΩ
– 台灣類比科技股份有限公司 –
– Advanced Analog Technology, Inc. –
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