AP8600MT Datasheet, PDF (5/6 Pages) Advanced Power Electronics Corp. – Ultra Low On-resistance

AP8600MT
2
I _D =1mA
1.6
1.2
0.8
0.4
0
-100
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 13. Normalized BV_DSS v.s. Junction
Temperature
18
T _j =25 ^o C
14
120
100
80
60
40
20
0
0
50
100
150
T _C , Case Temperature( ^o C)
Fig 14. Total Power Dissipation
V _GS =5.0V
10
.
6.0V
6
V _GS =10V
2
0
20
40
60
80
I _D , Drain Current (A)
Fig 15. Typ. Drain-Source on State
Resistance
5