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| AP8600MT Datasheet, PDF (1/6 Pages) Advanced Power Electronics Corp. – Ultra Low On-resistance | |||
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Advanced Power
Electronics Corp.
AP8600MT
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
â¼ Simple Drive Requirement
D
â¼ SO-8 Compatible with Heatsink
â¼ Ultra Low On-resistance
â¼ RoHS Compliant & Halogen-Free
G
S
Description
AP8600 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The PMPAK ® 5x6 package is special for DC-DC converters
application and the foot print is compatible with SO-8 with backside
heat sink and lower profile.
BVDSS
RDS(ON)
ID4
80V
3.9mΩ
120A
D
D
D
D
S
S
S
G
PMPAK® 5x6
Absolute
Symbol
Maximum
RatingPsa@ramTejt=er25o.C(unless
otherwise specified)
Rating
Units
VDS
VGS
ID@TC=25â
ID@TA=25â
ID@TA=70â
IDM
PD@TC=25â
PD@TA=25â
EAS
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Chip), VGS @ 10V4
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation3
Single Pulse Avalanche Energy5
Storage Temperature Range
Operating Junction Temperature Range
80
V
+20
V
120
A
26.6
A
21.3
A
240
A
104
W
5
W
86.4
mJ
-55 to 150
â
-55 to 150
â
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
1.2
25
Unit
â/W
â/W
1
201505262
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