AP8600MT Datasheet, PDF (4/6 Pages) Advanced Power Electronics Corp. – Ultra Low On-resistance

AP8600MT
12
I _D = 19 A
10 ^{V DS =40V}
8
6
4
2
0
0
20
40
60
80
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
f=1.0MHz
8000
6000
4000
C _iss
2000
C _oss
0
C _rss
0
20
40
60
80
100
V _DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1000
1
Operation in this
area limited by
100
RDS(ON)
10us
100us
10
1ms
10ms
1
100ms
DC
T _C =25 ^o C
Single Pulse
0.1
0.1
1
10
100
1000
V _DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Duty factor=0.5
0.2
0.1
.
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + Tc
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
160
160
V _DS =5V
120
120
80
Limited by package
40
0
25
50
75
100
125
150
T _C , Case Temperature ( ^o C )
Fig 11. Drain Current v.s. Case
Temperature
80
T _j =150 ^o C
40
T _j =25 ^o C
T _j = -55 ^o C
0
0
2
4
6
8
V _GS , Gate-to-Source Voltage (V)
Fig 12. Transfer Characteristics
4