AP8600MT Datasheet, PDF (3/6 Pages) Advanced Power Electronics Corp. – Ultra Low On-resistance

AP8600MT
250
T _C =25 ^o C
10V
9.0V
200
8.0V
7.0V
6.0V
150
V _G = 5.0V
100
50
0
0
2
4
6
8
10
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
120
T _C = 150 ^o C
10V
9.0V
100
8.0V
7.0V
80
6.0V
V _G = 5.0V
60
40
20
0
0
2
4
6
8
10
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
12
I _D = 19 A
T _C =25 ^o C
10
2.0
I _D =19A
V _G =10V
1.6
8
.
1.2
6
0.8
4
2
4
5
6
7
8
9
10
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
40
30
T _j =150 ^o C
T _j =25 ^o C
20
10
0.4
-100
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
I _D =250uA
1.6
1.2
0.8
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
0.0
-100
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3