AP4800M Datasheet, PDF (5/6 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP4800M
16
14
I _D =9A
V _DS =15V
12
10
8
6
4
2
0
0
5
10
15
20
25
30
Q _G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
f=1.0MHz
10000
1000
Ciss
Coss
100
Crss
10
1
6
11
16
21
26
V _DS (V)
Fig 10. Typical Capacitance Characteristics
100
3
10
2
T _j =150 ^o C
T _j =25 ^o C
1
1
0.1
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V _SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
0
-50
0
50
100
150
T _j , Junction Temperature( ^o C)
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature