AP4800M Datasheet, PDF (3/6 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP4800M
40
40
10V
8.0V
6.0V
30
30
10V
8.0V
6.0V
20
V _GS =4.0V
10
T _C =25 ^o C
0
0
1
2
3
4
5
6
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
20
V _GS =4.0V
10
T _C =150 ^o C
0
0
1
2
3
4
5
6
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
34
I _D =9A
30
T _C =25 ℃
26
22
18
14
10
2
3
4
5
6
7
8
9
10
11
V _GS (V)
Fig 3. On-Resistance v.s. Gate Voltage
1.8
I _D =9A
1.6 _{V GS =10V}
1.4
1.2
1
0.8
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature