AP4800M Datasheet, PDF (4/6 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP4800M
10
9
8
7
6
5
4
3
2
1
0
25
50
75
100
125
150
T _c , Case Temperature ( ^o C)
Fig 5. Maximum Drain Current v.s.
Case Temperature
3
2.5
2
1.5
1
0.5
0
0
50
100
150
T _{c ,} Case Temperature ( ^o C)
Fig 6. Typical Power Dissipation
100
10
1
0.1
T _C =25 ^o C
Single Pulse
0.01
0.1
1
10
V _DS (V)
100us
1ms
10ms
100ms
1s
10s
DC
100
Fig 7. Maximum Safe Operating Area
1
Duty Factor = 0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty Factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=125^oC/W
0.001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
100
1000
Fig 8. Effective Transient Thermal Impedance