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| AP4800M Datasheet, PDF (2/6 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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AP4800M
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ÎBVDSS/ÎTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25â, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=9A
VGS=4.5V, ID=7A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
VDS=VGS, ID=250uA
VDS=15V, ID=10A
VDS=25V, VGS=0V
VDS=20V, VGS=0V
VGS= ± 20V
ID=9A
VDS=15V
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
VGS=5V
VDS=15V
ID=1A
RG=6.2Ω,VGS=10V
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RD=15Ω
VGS=0V
VDS=25V
f=1.0MHz
25 -
-V
- 0.037 - V/â
-
- 18 mΩ
-
- 33 mΩ
1
-
3V
- 20 - S
-
-
1 uA
-
- 25 uA
-
- ±100 nA
- 10.9 - nC
- 1.9 - nC
- 7.4 - nC
-
7
- ns
- 10.5 - ns
- 20 - ns
- 17.5 - ns
- 390 - pF
- 245 - pF
- 100 - pF
Source-Drain Diode
Symbol
Parameter
IS
Continuous Source Current ( Body Diode )
VSD
Forward On Voltage2
Test Conditions
VD=VG=0V , VS=1.3V
Tj=25â, IS=2.3A, VGS=0V
Min. Typ. Max. Units
-
- 1.92 A
-
- 1.3 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 â/W when mounted on Min. copper pad.
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