AP80N30W Datasheet, PDF (4/5 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP80N30W
12
I _D =80A
10
8
V _DS = 240 V
6
4
2
0
0
40
80
120
160
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
1000
100
100us
10
1ms
10ms
1
T _c =25 ^o C
Single Pulse
100ms
DC
0.1
1
10
100
1000
V _DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
f=1.0MHz
8000
6000
C _iss
4000
2000
C _oss
0
C _rss
1
6
11
16
21
26
31
36
V _DS ,Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
V_DS
90%
10%
V_GS
t_d(on) t_r
t_d(off) t_f
V_G
10V
Q_GS
Q_G
Q_GD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4