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AP80N30W Datasheet, PDF (2/5 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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AP80N30W
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
Drain-Source Leakage Current
IDSS
Drain-Source Leakage Current (Tj=125oC)
IGSS
Gate-Source Leakage
Qg
Total Gate Charge2
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time2
tr
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
VGS=0V, ID=10mA
VGS=10V, ID=40A
VDS=VGS, ID=250uA
VDS=10V, ID=40A
VDS=300V, VGS=0V
VDS=300V, VGS=0V
VGS= ±30V, VDS=0V
ID=80A
VDS=240V
VGS=10V
VDS=150V
ID=40A
RG=10Ω,VGS=10V
RD=3.75Ω
VGS=0V
VDS=30V
f=1.0MHz
Test Conditions
IS=80A, VGS=0V
IS=12A, VGS=0V
dI/dt=100A/µs
300 -
-
-
-
V
66 mΩ
3
- 4.5 V
- 38 -
S
-
- 10 uA
-
- 200 uA
-
- ±0.1 uA
- 113 180 nC
- 31 - nC
- 44 - nC
- 40 - ns
- 130 - ns
- 150 - ns
- 115 - ns
- 5700 9120 pF
- 525 - pF
- 10 - pF
Min. Typ. Max. Units
-
- 1.5 V
- 310 - ns
- 3.5 - µC
Notes:
1.PW ≦ 10 µs, duty cycle ≦ 1%.
2.Pulse test
3.STch = 25℃，Tch ≦ 150℃
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
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