AP80N30W Datasheet, PDF (3/5 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

120
T _C =25 ^o C
100
80
10V
9.0V
8.0V
7.0V
60
40
V _G =5.0V
20
0
0.0
4.0
8.0
12.0
16.0
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
70
T _C =25 ^o C
I _D =40A
65
60
55
50
4
5
6
7
8
9
10
V _GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
40
30
T _j =150 ^o C
T _j =25 ^o C
20
10
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP80N30W
60
T _C =150 ^o C
50
40
30
10V
9.0V
8.0V
7.0V
V _G =5.0V
20
10
0
0.0
4.0
8.0
12.0
16.0
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.8
I _D =40A
V _G =10V
2.3
1.8
1.3
0.8
0.3
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
1.2
1
0.8
0.6
0.4
-50
0
50
100
150
T _j , Junction Temperature ( ^o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3