AP80N30W Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power
Electronics Corp.
AP80N30W
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower On-resistance
▼ High Speed Switching
G
S
Description
AP80N30 from APEC provide the designer with the best combination of fast
switching , low on-resistance and cost-effectiveness .
BV_DSS
R_DS(ON)
I_D
The TO-3P package is preferred for commercial & industrial applications
with higher power level preclusion than TO-220 device.
G
D
S
300V
66mΩ
88A
TO-3P
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_C=25℃
I_DM
I_DR
I_DR(PULSE)
P_D@T_C=25℃
I_AR
E_AR
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Body-Drain Diode Reverse Drain Current
Body-Drain Diode Reverse Drain Peak Current¹
Total Power Dissipation
Avalanche Current³
Single Pulse Avalanche Energy³
Storage Temperature Range
Operating Junction Temperature
Rating
300
±30
88
270
88
270
150
30
45
-55 to 150
150
Units
V
V
A
A
A
A
W
A
mJ
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
0.833
40
Units
℃/W
℃/W
1
200805132