IC61C256AH Datasheet, PDF (2/9 Pages) Integrated Circuit Solution Inc – 32K x 8 HIGH-SPEED CMOS STATIC RAM

IC61C256AH
32K x 8 HIGH-SPEED CMOS STATIC RAM
FEATURES
• High-speed access times: 10, 12, 15, 20, 25 ns
• Low active power: 400 mW (typical)
• Low standby power
-- 250 µW (typical) CMOS standby
-- 55 mW (typical) TTL standby
• Fully static operation: no clock or refresh
required
• TTL compatible interface and outputs
• Single 5V power supply
DESCRIPTION
The ICSI IC61C256AH is very high-speed, low power, 32,768
word by 8-bit static RAMs. They are fabricated using ICSI's
high-performance CMOS technology. This highly reliable pro-
cess coupled with innovative circuit design techniques, yields
access times as fast as 8 ns maximum.
When CE is HIGH (deselected), the device assumes a standby
mode at which the power dissipation is reduced to
50 µW (typical) with CMOS input levels.
Easy memory expansion is provided by using an active LOW
Chip Enable (CE). The active LOW Write Enable (WE) controls
both writing and reading of the memory.
The IC61C256AH is pin compatible with other 32k x 8 SRAMs
and are available in 28-pin 300mil PDIP, 300mil SOJ, and
8*13.4mm TSOP-1 package, 330 mil SOP.
FUNCTIONAL BLOCK DIAGRAM
A0-A14
VCC
GND
I/O0-I/O7
DECODER
32K X 8
MEMORY ARRAY
I/O
DATA
CIRCUIT
COLUMN I/O
CE
CONTROL
OE
CIRCUIT
WE
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
2
Integrated Circuit Solution Inc.
AHSR010-0D 4/19/2002