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3N60 Datasheet, PDF (6/7 Pages) Unisonic Technologies – 3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET
Z ibo Seno Electronic Engineering Co., Ltd.
 TYPICAL CHARACTERISTICS
3N60 3N65
Power MOSFET
On-Resistance Variation vs.
Drain Current and Gate Voltage
6
5
4
VGS=20V
3
VGS=10V
2
1
Note: TJ=25℃
0
0
2
4
6
8 10 12
Drain Current, ID (A)
On State Current vs.
Allowable Case Temperature
10
1
Notes:
1. VGS=0V
2. 250µs Test
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Source-Drain Voltage, VSD (V)
3N60 3N65
6 of 7
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