3N60 Datasheet, PDF (2/7 Pages) Unisonic Technologies – 3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

Z ibo Seno Electronic Engineering Co., Ltd.
3N60 3N65
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (T_C = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
3N60
600
V
Drain-Source Voltage
3N65
V_DSS
650
V
Gate-Source Voltage
V_GSS
±30
V
Avalanche Current (Note 2)
I_AR
3.0
A
Drain Current
Continuous
I_D
Pulsed (Note 2)
I_DM
3.0
A
12
A
Avalanche Energy ^{Single Pulsed (Note 3)}
E_AS
Repetitive (Note 2)
E_AR
200
mJ
7.5
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220
75
W
TO-220F
34
W
Power Dissipation TO-251/IPAK
P_D
(T_C = 25°С)
50
W
TO-252/DPAK
50
W
Junction Temperature
T_J
+150
°С
Ambient Operating Temperature
T_OPR
-55 ~ +150
°С
Storage Temperature
T_STG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by T_J
3. L=64mH, I_AS=3.0A, V_DD=50V, R_G=25 Ω, Starting T_J = 25°C
4. I_SD≤3.0A, di/dt≤200A/μs, V_DD ≤ BV_DSS, Starting T_J = 25°C
„ THERMAL DATA
PARAMETER
Junction-to-Ambient
Junction-to-Case
TO-251/IPAK
TO-252/DPAK
TO-220
TO-220F
TO-251/IPAK
TO-252/DPAK
TO-220
TO-220F
SYMBOL
θ_JA
θ_Jc
RATINGS
110
110
62.5
62.5
2.50
2.50
1.67
3.68
UNIT
℃/W
℃/W
3N60 3N65
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