3N60 Datasheet, PDF (3/7 Pages) Unisonic Technologies – 3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

Z ibo Seno Electronic Engineering Co., Ltd.
3N60 3N65
Power MOSFET
„ ELECTRICAL CHARACTERISTICS (T_J =25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
3N60
600
V
Drain-Source Breakdown Voltage
3N65
BV_DSS V_GS = 0V, I_D = 250μA
650
V
Drain-Source Leakage Current
I_DSS
V_DS = 600V, V_GS = 0V
10 μA
Gate-Source Leakage Current
Forward
Reverse
I_GSS
V_GS = 30V, V_DS = 0V
V_GS = -30V, V_DS = 0V
100 nA
-100 nA
Breakdown Voltage Temperature Coefficient
△BV_DSS/△T_J
I_D = 250 μA, Referenced to
25°C
0.6
V/°С
ON CHARACTERISTICS
Gate Threshold Voltage
V_GS(TH) V_DS = V_GS, I_D = 250μA
2.0
4.0 V
Static Drain-Source On-State Resistance
R_DS(ON) V_GS = 10V, I_D =1.5A
2.8 3.6 Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
C_ISS
C_OSS
V_DS =25V, V_GS =0V,f =1MHz
350 450 pF
50 65 pF
Reverse Transfer Capacitance
C_RSS
5.5 7.5 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
t_{D (ON)}
t_R
t_D(OFF)
t_F
Q_G
Q_GS
Q_GD
V_DD =30V, I _D =3.0A,
R_G=25Ω
(Note 1, 2)
V_DS=50V, V_GS=10V,
I_D=3.0A
(Note 1, 2)
35 50 ns
60 70 ns
100 150 ns
65 75 ns
18.5 23 nC
5.2
nC
4.9
nC
Drain-Source Diode Forward Voltage
V_SD
Continuous Drain-Source Current
I_SD
Pulsed Drain-Source Current
I_SM
Reverse Recovery Time
t_RR
Reverse Recovery Charge
Q_RR
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%
V_GS = 0 V, I_SD = 3.0 A
V_GS = 0 V, I_SD = 3.0A,
di/dt = 100 A/μs (Note1)
1.4 V
3.0 A
12 A
210
ns
1.2
μC
2. Essentially independent of operating temperature
3N60 3N65
3 of 7
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