MMBT2222A Datasheet, PDF (4/5 Pages) NXP Semiconductors – NPN switching transistor

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MMBT2222A
200
100
IC/B = 10
TJ= 25^oC
70
50
30
tr @ VCC=30V
td @ VEB(off)=2.0V
20
td @ VEB(off)=0
10
7.0
5.0
3.0
2.0
5.0 7.0 10
20 30 50 70 100
200 300 500
IC, COLLECTOR CURRENT ( mA )
Figure 5. Turn - On Time
500
300
200
VCC=30 V
IC/IB=10
IB1=IB1
TJ= 25^oC
100
70
50
30
20
10
7.0
5.0
5.0
7.0 10
20 30 50 70 100
200 300 500
IC, COLLECTOR CURRENT ( mA )
Figure 6. Turn - Off Time
10
IC =1.0mA, RS=150
500uA, RS=200
8.0
100uA, RS=2.0k
50uA, RS=4.0k
6.0
RS =OPTIMUM
SOURCE
RESISTANCE
4.0
2.0
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
f, FREQUENCY ( kHZ )
Figure 7. Frequency Effects
50 100
10
f=1.0kHz
8.0
IC =50uA
6.0
100uA
4.0
500uA
1.0mA
2.0
0
50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
RS, SOURCE RESISTANCE (OHMS)
Figure 8. Source Resistance Effects
30
20
Ceb
10
7.0
5.0
Ccb
3.0
2.0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
20 30 50
REVERSE VOLTAGE ( VOLTS )
Figure 9. Capacitances
REV. : 0
500
300
VCE = 10 V
TA= 25^oC
200
100
70
50
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
IC, COLLECTOR CURRENT ( mA )
Figure 10. Current-Gain Bandwidth Product
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