MMBT2222A Datasheet, PDF (2/5 Pages) NXP Semiconductors – NPN switching transistor

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ELECTRICAL CHARACTERISTICS (TA=25^oC unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS⁽³⁾
Symbol
Min.
DC Current Gain
( IC=0.1 mAdc, VCE=10 Vdc )
( IC=1.0 mAdc, VCE=10 Vdc )
( IC=10 mAdc, VCE=10 Vdc )
( IC=10 mAdc, VCE=10 Vdc, TA=-55^oC )
( IC=150 mAdc, VCE=10 Vdc )⁽³⁾
( IC=150 mAdc, VCE=1.0 Vdc )⁽³⁾
( IC=500 mAdc, VCE=10 Vdc )⁽³⁾
35
50
75
HFE
35
100
50
40
Collector-Emitter Saturation Voltage⁽³⁾
( IC=150 mAdc, IB=15 mAdc )
( IC=500 mAdc, IB=50 mAdc )
VCE(sat)
-
-
Base-Emitter Saturation Voltage⁽³⁾
( IC=150 mAdc, IB=15 mAdc )
( IC=500 mAdc, IB=50 mAdc )
VBE(sat)
0.6
-
SMALL-SIGNAL CHARACTERISTIC
Current-Gain-Bandwidth Product⁽⁴⁾
( IC=20 mAdc, VCE=20 Vdc, f=100 MHZ )
Output Capacitance
( VCB=10 Vdc, IE=0, f=1.0 MHZ )
Input Capacitance
( VEB=0.5 Vdc, IC=0, f=1.0 MHZ )
Input Impedance
( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ )
( VCE=10 Vdc, IC=10 mAdc, f=1.0 kHZ )
Voltage Feedback Ratio
( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ )
( VCE=10 Vdc, IC=10 mAdc, f=1.0 kHZ )
Small-Signal Current Gain
( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ )
( VCE=10 Vdc, IC=10 mAdc, f=1.0 kHZ )
Output Admittance
( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ )
( VCE=10 Vdc, IC=10 mAdc, f=1.0 kHZ )
Collector Base Time Constant
( VCB=10 Vdc, IC=100 uAdc, RS = 1.0 k ohms, f=1.0 kHZ )
Noise Figure
( VCE=10 Vdc, IC=100 uAdc, RS=1.0 k ohm, f=1.0 kHZ )
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
( VCC=30 Vdc, VBE (off) = -0.5 Vdc,
IC =150 mAdc, IB1 = 15 mAdc )
( VCC=30 Vdc, IC = 150 mAdc,
IB1 =IB2 = 15 mAdc )
(3) Pulse Test : Pulse Width 300 uS, Duty Cycle 2.0%.
(2) fT is defined as the frequency at which hfe extrapolates to unity.
fT
Cobo
Cibo
hie
hre
hfe
hoe
rb, Cc
NF
300
-
-
2.0
0.25
-
-
50
75
5.0
25
-
-
td
-
tr
-
ts
-
tf
-
REV. : 0
Max.
Unit
-
-
-
-
-
300
-
-
0.3
Vdc
1.0
1.2
Vdc
2.0
-
8.0
25
8.0
1.25
8.0
4.0
300
375
35
200
150
4.0
MHZ
pF
pF
k ohms
X 10^-4
-
u mhos
ps
dB
10
nS
25
225
nS
60
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