MMBT2222A Datasheet, PDF (1/5 Pages) NXP Semiconductors – NPN switching transistor

Zowie Technology Corporation
General Purpose Transistor
NPN Silicon
MMBT2222A
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
3
1
2
SOT-23
COLLECTOR
3
BASE
1
2
EMITTER
Symbol
VCEO
VCBO
VEBO
IC
Value
40
75
6.0
600
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board⁽¹⁾ TA=25^oC
Derate above 25^oC
Thermal Resistance Junction to Ambient
Total Device Dissipation Alumina Substrate,⁽²⁾ TA=25^oC
Derate above 25^oC
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R JA
PD
R JA
TJ,TSTG
Max.
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW / ^oC
o_{C / W}
mW
mW / ^oC
o_{C / W}
o_C
DEVICE MARKING
MMBT2222A=1P
ELECTRICAL CHARACTERISTICS (TA=25^oC unless otherwise noted)
Characteristic
Symbol
Min.
OFF CHARACTERISTICS
Collector-Emitter Breakdowe Voltage
( IC=10mAdc, IB=0 )
V(BR)CEO
40
Collector-Emitter Breakdowe Voltage
( IC=10uAdc, IE=0 )
V(BR)CBO
75
Emitter - Base Breakdowe Voltage
( IE=10 uAdc, IC=0 )
V(BR)EBO
6.0
Collector Cutoff Current
( VCE=60 Vdc, VEB (off)=3.0 Vdc )
ICEX
-
Collector Cutoff Current
( VCB=60 Vdc, IE=0 )
( VCB=60 Vdc, IE=0, TA=125^oC )
Emitter Cutoff Current ( VEB=3.0 Vdc, IC=0 )
Base Cutoff Current ( VCE=60 V, VEB (off)=3.0 Vdc )
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
ICBO
-
-
IEBO
-
IBL
-
Max.
Unit
-
Vdc
-
Vdc
-
Vdc
10
nAdc
0.01
uAdc
10
100
nAdc
20
nAdc
REV. : 0
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