U62H64 Datasheet, PDF (4/9 Pages) Zentrum Mikroelektronik Dresden AG – AUTOMOTIVE FAST 8K X 8 SRAM

U62H64
Electrical Characteristics
Supply Current - Operating Mode
Supply Current - Standby Mode
(CMOS level)
Symbol
Conditions
I_CC(OP)
V_CC
V_IL
V_IH
t_cW
= 5.5 V
= 0.8 V
= 2.2 V
= 35 ns
I_CC(SB)
V_CC
V_E1 = V_E2
K-Type
A-Type
= 5.5 V
= V_CC - 0.2 V
Supply Current - Standby Mode
(TTL level)
I_CC(SB)1 V_CC
= 5.5 V
V_E1 = V_E2 = 2.2 V
Supply Current - Data Retention Mode
I_CC(DR)
V_CC(DR)
V_E1 = V_E2
K-Type
A-Type
= 2.0 V
= V_CC(DR) - 0.2 V
Output High Voltage
Output Low Voltage
Output High Current
Output Low Current
Input High Leakage Current
Input Low Leakage Current
Output Leakage Current
High at Three-State Outputs
Low at Three-State Outputs
V_OH
V_OL
I_OH
I_OL
I_IH
I_IL
V_CC
I_OH
V_CC
I_OL
V_CC
V_OH
V_CC
V_OL
V_CC
V_IH
V_CC
V_IL
I_OHZ
I_OLZ
V_CC
V_OH
V_CC
V_OL
= 4.5 V
= -4.0 mA
= 4.5 V
= 8.0 mA
= 4.5 V
= 2.4 V
= 4.5 V
= 0.4 V
= 5.5 V
= 5.5 V
= 5.5 V
= 0V
= 5.5 V
= 5.5 V
= 5.5 V
= 0V
Min.
2.4
-
-
8.0
-
-2
-
-2
Max. Unit
50
mA
5
µA
100
µA
5
mA
(typ. 2)
3
µA
50
µA
-
V
0.4
V
-4.0
mA
-
mA
2
µA
-
µA
2
µA
-
µA
4
April 20, 2004