SP5026 Datasheet, PDF (9/11 Pages) Zarlink Semiconductor Inc – 1.0GHz 3-Wire Bus Controlled Synthesizer

SP5026
Data Sheet
Electrical Characteristics Table^† (continued)
Characteristics
Value
Symbol Pin
Units
Min. Typ. Max.
Conditions
Clock input hysteresis
5
0.4
V
Clock rate
5
0.5 MHz
Data set up time
Data hold time
Enable set up time
Enable hold time
Clock-to-enable time
Charge pump output current
t₂
4
300
t₃
4
600
t₁
10
300
t₅
10
600
t₄
10
300
1
+150
ns
See Figure 3
ns
See Figure 3
ns
See Figure 3
ns
See Figure 3
ns
See Figure 4
µA V pin 1= 2.0V
Charge pump output
leakage current
1
+5
nA V pin 1= 2.0V
Drift due to leakage
5
mV/s At collector of external
varicap drive transistor
Charge pump drive
output current
18
1
mA V pin 18 = 0.7V
Charge pump amplifier gain
Oscillator temperature
stability
6400
Pin 18 Current 100µA
2 ppm/^oC
Oscillator stability
with supply voltage
2 ppm/V
Recommended crystal
series resistance
10
200
Ω
“Parallel resonant” crystal
Crystal oscillator drive level
2
40
mV p-p
Crystal oscillator source
impedance
2
-400
Ω
Nominal spread = +15%
Port leakage current
6-9
10
µA
V_OUT = 13.2V
Lock leakage current
11
10
µA
V_OUT = V_CC
Varactor Drive Amp Disable
10
-350
µA
V_IN = <0V
Charge Pump Disable
4
-350
µA
V_IN = <0V
T†hTe^as^me^bc=h-2a0ra⁰cCtetoris+ti8c0s⁰aCr,eVg^Cu^Car=an+t4e.e5dV
to
by
+5.5V. Reference frequency = 4MHz. Pin numbers refer to SP5026 (DP package).
either test or design. They apply within the specified ambient temperature and supply
voltage
unless
otherwise stated.
8
Zarlink Semiconductor Inc.