SP5768 Datasheet, PDF (3/10 Pages) Zarlink Semiconductor Inc – 3.0 GHz Low Phase Noise Frequency Synthesiser

SP5768
Electrical Characteristics (continued)
These characteristics are guaranteed by either production test or design. They apply within the specified ambient
temperature and supply voltage unless otherwise stated. Tamb = -40°C to 80°C, Vcc = +4·5V to +5·5V
Characteristic
Pin
Value
Units
Min
Typ
Max
Conditions
Charge pump output
1
current
Charge pump output
1
leakage
Charge pump drive
16
output current
Crystal frequency
2,3
External reference input 3
frequency
External reference drive 3
level
See Table 1
Vpin1 = 2V
±3
±10
nA Vpin1=2V, Vcc = +5.0V,
Tamb = 25°C
0.5
mA Vpin 16=0.7V
2
20
MHz See Figure 5 for application
2
20
MHz Sinewave coupled through
10F blocking capacitor
0.2
0.5
Vpp Sinewave coupled through
10nF blocking capacitor
Buffered reference
11
frequency output
output amplitude
output impedance
Comparison frequency
AC coupled, See note 1
0.35
Vpp 2-20MHz
250
Ω
4
MHz
Equivalent phase noise
at phase detector
-148
dBc/Hz
At 10 kHz, SSB, with 2 MHz
comparison from 4 MHz
crystal reference
RF division ratio
240
131071
Reference division ratio
2
320
See Table 2
Output ports P0-P3
sink current
leakage current
7,8,9,10
See Note 2
2
mA Vport = 0.7V
10
µA Vport = Vcc
1 Reference output disabled by connecting to Vcc if not required
2 Output ports high impedance on power up, with data, clock and enable at logic 0
3