MMBTA92 Datasheet, PDF (3/4 Pages) NXP Semiconductors – PNP high-voltage transistor

DEVICE CHARACTERISTICS
MMBTA92
150
T J = +125°C
100
+25°C
70
50
–55°C
V CE = –10 Vdc
30
20
15
–1.0
–2.0
–3.0
–5.0
–7.0
–10
–20
–30
–50
–80 –100
I C , COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
100
50
C ib
20
10
5.0
2.0
1.0
–0.1 –0.2 –0.5 –1.0 –2.0
–5.0 –10 –20
C cb
–50 –100 –200 –500 –1000
V R , REVERSE VOLTAGE (VOLTS)
Figure 2. Capacitances
–1.0
100
80 ^{T J = 25°C}
V CE = –20 Vdc
60
40
30
20
0
–1.0
–2.0
–5.0
–10
–20
–50 –100
I C , COLLECTOR CURRENT (mA)
Figure 3. Current–Gain — Bandwidth Product
–0.8
V BE @ V CE = –10 V
–0.6
–0.4
–0.2
V CE(sat) @ I C /I B = 10 mA
0
–1.0 –2.0
–5.0
–10
–20
–50
–100
I C , COLLECTOR CURRENT (mA)
Figure 4. “On” Voltages
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