MMBTA92 Datasheet, PDF (2/4 Pages) NXP Semiconductors – PNP high-voltage transistor

DEVICE CHARACTERISTICS
MMBTA92
ELECTRICAL CHARACTERISTICS (T _A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
ON CHARACTERISTICS (3)
DC Current Gain
(I C =–1.0mAdc, V CE = –10 Vdc)
(I C = –10 mAdc, V CE = –10Vdc)
(I C = –30mAdc, V CE =–10 Vdc)
Both Types
Both Types
MMBTA92
MMBTA93
hFE
25
40
25
25
Collector–Emitter Saturation Voltage
(I C = –20mAdc, I B = –2.0 mAdc)
MMBTA92
MMBTA93
VCE(sat)
––
––
Base–Emitter Saturation Voltage
(I C = –20mAdc, I B = –2.0 mAdc)
V BE(sat)
—
Max
––
––
––
––
–0.5
–0.5
–0.9
Unit
—
Vdc
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(3),(4)
(I C = –10mAdc, V CE= –20Vdc, f = 100MHz)
Collector – Base Capacitance
(V CB = –20 Vdc, I E = 0, f = 1.0 MHz)
MMBTA92
MMBTA93
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
fT
50
––
MHz
C cb
pF
––
6.0
––
8.0
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