MMBTA92 Datasheet, PDF (1/4 Pages) NXP Semiconductors – PNP high-voltage transistor

DATA SHEET
SEMICONDUCTOR
High Voltage Transistor
PNP Silicon
MAXIMUM RATINGS
Rating
Value
Symbol MMBTA92 MMBTA93 Unit
Collector–Emitter Voltage
V CEO
–300
–200 Vdc
Collector–Base Voltage
V CBO
–300
–200 Vdc
Emitter–Base Voltage
V EBO
–5.0
Vdc
Collector Current — Continuous I C
–500
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max
225
1.8
556
300
2.4
417
–55 to +150
DEVICE MARKING
MMBTA92 = 2D, MMBTA93 = 2E
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(I C = –1.0 mAdc, I B = 0)
Collector–Emitter Breakdown Voltage
(I C = –100 µAdc, I E = 0)
Emitter–Base Breakdown Voltage
(I E = –100 µAdc, I C = 0)
Collector Cutoff Current
( V CB = –200Vdc, I E = 0)
( V CB = –160Vdc, I E = 0)
Collector Cutoff Current
( V CB = –3.0Vdc, I C = 0)
MMBTA92
MMBTA93
MMBTA92
MMBTA93
MMBTA92
MMBTA93
V (BR)CEO
V (BR)CBO
V (BR)EBO
I CBO
I EBO
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Min
–300
–200
–300
–200
–5.0
—
—
—
MMBTA92
H
SOT–23 (TO–236AB)
3
1
1
BASE
2
3
COLLECTOR
2
EMITTER
Max
Unit
—
—
—
—
—
–0.25
–0.25
–0.1
Vdc
Vdc
Vdc
nAdc
µAdc
http://www.yeashin.com
1
REV.02 20120703