AP502 Datasheet, PDF (3/5 Pages) WJ Communication. Inc. – UMTS-band 4W HBT Amplifier Module

AP502
UMTS-band 4W HBT Amplifier Module
The Communications Edge ^TM
Product Information
Performance Graphs – Class B Configuration
The AP502 can be adjusted to operate at lower current biasing levels by modifying the R7 resistor for improved efficiency
performance. The configuration shown on this page has the AP502 operating with Icq = 250 mA (Icc = 400 mA @ 27 dBm).
Output L-C matching components have been added externally on the circuit to optimize the amplifier for ACPR performance at
this biasing configuration.
DNP
10μF
0Ω
730Ω
DNP
100pF
DNP
.01μF
RF IN
DNP
0Ω
DNP
DNP
.01μF
DNP
6 54 32 1
100pF
2.2nH
DNP
RF OUT
DNP
Notes:
1. Please note that for reliable operation, the evaluation board will have to
be mounted to a much larger heat sink during operation and in laboratory
environments to dissipate the power consumed by the device. The use of
a convection fan is also recommended in laboratory environments.
Details of the mounting holes used in the WJ heatsink are given on the
last page of this datasheet.
2. The area around the module underneath the PCB should not contain any
soldermask in order to maintain good RF grounding.
3. For proper and safe operation in the laboratory, the power-on sequencing
should be followed:
a. Connect RF In and Out
b. Connect the voltages and ground pins as shown in the circuit.
c. Apply the RF signal
d. Power down with the reverse sequence
Narrowband S-Parameters
+25 °C, Icq=275mA
31
5
30
0
29
-5
28
-10
27
26
2110
S21 S11
2130
2150
Frequency (MHz)
-15
S22
-20
2170
ACLR vs. Channel Power
+25 °C, 3GPP W-CDMA, Test Model 1+32 DPCH, 1960 MHz, Icq=250mA
-40
-50
-60
±5 MHz
±10 MHz
-70
20 21 22 23 24 25 26 27 28
Output Channel Power (dBm)
Wideband S-Parameters
+25 °C, Icq=275mA
40
S21
S11
20
S22
0
-20
-40
0 500 1000 1500 2000 2500 3000
Frequency (MHz)
IMD3, IMD5, OIP3 vs. Ouptut Power
2140 MHz, +25 °C, Icq=275mA
-20
60
IMD3L
IMD3U
-30 _IMD5
50
OIP3
-40
40
-50
30
-60
20
20 22 24 26 28 30 32
Output Power per tone (dBm)
Gain / Output Power vs. Input Power
2140 MHz, +25 °C, Icq=275mA
38
30
36
29
34
28
32
27
Pout
30
26
Gain
28
25
-2 0 2 4 6 8 10
Input Power (dBm)
PAE / Icc vs. Output Power
2140 MHz, +25 °C, Icq=275mA
800
25
Icc
PAE
700
20
600
15
500
10
400
5
300
0
22 24 26 28 30 32 34
Output Power (dBm)
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: [phone] • e-mail: [e-mail] • Web site: www.wj.com
Page 3 of 5 February 2006