AP502 Datasheet, PDF (2/5 Pages) WJ Communication. Inc. – UMTS-band 4W HBT Amplifier Module

AP502
UMTS-band 4W HBT Amplifier Module
The Communications Edge ^TM
Product Information
Performance Graphs – Class AB Configuration (AP502-PCB)
The AP502-PCB and AP502 module is configured for Class AB by default. The resistor – R7 – which sets the current draw for
the amplifier is set at 0 Ω in this configuration. Increasing that value will decrease the quiescent and operating current of the
amplifier module, as described on the next page.
DNP
10μF
0Ω
0Ω
RF IN
DNP
DNP
0Ω
DNP
DNP
100pF
.01μF
DNP
DNP
6 54 32 1
.01μF
100pF
0Ω
DNP
RF OUT
DNP
Notes:
1. Please note that for reliable operation, the evaluation board will have to
be mounted to a much larger heat sink during operation and in laboratory
environments to dissipate the power consumed by the device. The use of
a convection fan is also recommended in laboratory environments.
Details of the mounting holes used in the WJ heatsink are given on the
last page of this datasheet.
2. The area around the module underneath the PCB should not contain any
soldermask in order to maintain good RF grounding.
3. For proper and safe operation in the laboratory, the power-on sequencing
should be followed:
a. Connect RF In and Out
b. Connect the voltages and ground pins as shown in the circuit.
c. Apply the RF signal
d. Power down with the reverse sequence
Narrowband S-Parameters
+25 °C, Icq=850mA
33
5
32
0
31
-5
30
-10
29
28
2110
S21 S11
2130
2150
Frequency (MHz)
-15
S22
-20
2170
ACLR vs. Channel Power
3GPP W-CDMA, 1FA, Test Model 1+32 DPCH, ±5 MHz offset
2140 MHz, Icq=850mA
-40
-40 C
-45
+25 C
+85 C
-50
-55
-60
18
20
22
24
26
28
Output Channel Power (dBm)
Wideband S-Parameters
+25 °C, Icq=850mA
40
S21
S11
20
S22
0
-20
-40
0 500 1000 1500 2000 2500 3000
Frequency (MHz)
IMD3, IMD5, OIP3 vs. Ouptut Power
2140 MHz, +25 °C, Icq = 850mA
-40
60
-50
50
-60
-70
-80
20
40
IMD3L
IMD3U ₃₀
IMD5
OIP3
20
22 24 26 28 30 32
Output Power per tone (dBm)
Gain / Output Power vs. Input Power
2140 MHz, +25 °C, Icq = 850mA
38
32.5
36
32
34
31.5
32
30
28
-6
1000
950
31
Pout
30.5
Gain
30
-4 -2 0 2 4 6
Input Power (dBm)
PAE / Icc vs. Output Power
2140 MHz, +25 °C, Icq = 850mA
25
Icc
PAE
20
900
15
850
10
800
5
750
0
22 24 26 28 30 32 34
Output Power (dBm)
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: [phone] • e-mail: [e-mail] • Web site: www.wj.com
Page 2 of 5 February 2006