AP502 Datasheet, PDF (1/5 Pages) WJ Communication. Inc. – UMTS-band 4W HBT Amplifier Module

AP502
UMTS-band 4W HBT Amplifier Module
The Communications Edge ^TM
Product Information
Product Features
Product Description
Functional Diagram
• 2110 – 2170 MHz
• 30 dB Gain
• +36 dBm P1dB
• -55 dBc ACLR
@ 25 dBm wCDMA linear power
• +12 V Single Supply
• Power Down Mode
• Bias Current Adjustable
• RoHS-compliant flange-mount pkg
Applications
• Final stage amplifiers for repeaters
• Optimized for driver amplifier
PA mobile infrastructure
The AP502 is a high dynamic range power amplifier in a
RoHS-compliant flange-mount package. The multi-stage
amplifier module has 30 dB gain, while being able to achieve
high performance for PCS-band applications with +36 dBm
of compressed 1dB power. The module has been internally
optimized for driver applications provide -55 dBc ACLR at
25 for wCDMA applications. The module can be biased
down for current when higher efficiency is required.
The AP502 uses a high reliability InGaP/GaAs HBT process
technology and does not require any external matching
components. The module operates off a +12V supply and
does not requiring any negative biasing voltages; an internal
active bias allows the amplifier to maintain high linearity
over temperature. It has the added feature of a +5V power
down control pin. A low-cost metal housing allows the
device to have a low thermal resistance to ensure long
lifetimes. All devices are 100% RF and DC tested.
The AP502 is targeted for use as a driver or final stage amplifier
in wireless infrastructure where high linearity and high power is
required. This combination makes the device an excellent
candidate for next generation multi-carrier 3G base stations.
123
456
Top View
Pin No.
1
2/4
3/5
6
Case
Function
RF Output
Vcc
Vpd
RF Input
Ground
Specifications
25 ºC, V_cc=12V, V_pd=5V, I_cq=820mA, R7=0Ω, 50Ω unmatched fixture
Parameter
Operational Bandwidth
Test Frequency
Power Gain
wCDMA ACLR1 @ 25dBm ⁽¹⁾
wCDMA ACLR2 @ 25dBm ⁽²⁾
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
Operating Current @ 25 dBm
Quiescent Current, Icq
Device Voltage, Vcc
Device Voltage, Vpd ⁽²⁾
Load Stability
Units
MHz
MHz
dB
dBc
dB
dB
dBm
dBm
mA
mA
V
V
VSWR
Min Typ Max
2110 – 2170
2140
28.5 30 34.5
-55 -50
-68 -53
11
5.3
+36
+52
790 840 940
780 820 920
+12
+5
10:1
1. 3GPP wCDMA signal modulation, Test model 1+32 DPCH, 3.84 MHz BW, ±5 MHz offset.
2. 3GPP wCDMA signal modulation, Test model 1+32 DPCH, 3.84 MHz BW, ±10 MHz offset.
3. Pull-down voltage: 0V = “OFF”, 5V=”ON”
Typical Performance ⁽⁴⁾
Parameter
Operating Current @ 25 dBm
Quiescent Current, Icq
Device Voltage, Vcc
R7 value
Test Frequency
Power Gain
wCDMA ACLR1 @ 25dBm ⁽²⁾
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
Units
mA
mA
V
Ω
MHz
dB
dBc
dB
dB
dBm
dBm
Config1
840
820
+12
0
2140
30
-55
11
5.3
+36
+52
Config2
420
250
+12
730
2140
27.7
-47.5
10
7
+36
+50
4. Configuration 1 has the module biased in Class AB and is detailed on page 2 of the datasheet.
Performance is shown at 25 ºC, Vcc=12V, Vpd=5V, Icq=820mA, R7=0Ω, 50Ω unmatched fixture.
Configuration 2 has the module biased in near Class B and is detailed on page 3 of the datasheet.
Performance is shown at 25 ºC, Vcc=12V, Vpd=5V, Icq=250mA, R7=730Ω, 50Ω tuned fixture.
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
with output terminated in 50 Ω
Rating
-40 to +85 °C
-55 to +150 °C
+15 dBm
Ordering Information
Part No.
AP502
AP502-PCB
Description
UMTS-band 4W HBT Amplifier Module
Fully-Assembled Evaluation Board
(Class AB configuration, Icq=820mA)
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: [phone] • e-mail: [e-mail] • Web site: www.wj.com
Page 1 of 5 February 2006