WCD8C60S Datasheet, PDF (3/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – Sensitive Gate Silicon Controlled Rectifiers

WCD8C60S
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Fig.1Maximum average power dissipation
versus average on-state current
Fig .2 Average and D.C.on-state current
versus ambient temperature (device mounted
on FR4 with recommended pad layont
Fig. 3Surge peak on-state current versus
Number of cycles.
Fig. 4On-state Characteristics (maximum values)
Fig.5Non-repetitive surge peak on-state current
for a sinusoidal pulse with width Tp<10ms and
corresponding value of l²t
Fig.6Relative variation of gate trigger current
and holding versus junction temperature
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