WCD8C60S Datasheet, PDF (2/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – Sensitive Gate Silicon Controlled Rectifiers

WCD8C60S
Electrical Characteristics (TJ=25℃ ,RGK=1KΩ unless otherwise specified)
Symbol
Characteristics
Min
Value
Units
Typ Max
Off-state leakage current
IDRM/IRRM
(VAK=VDRM/VRRM)
TC=25℃
TC=125℃
-
-
5
μA
1
mA
VTM
IGT
VGT
VGD
dv/dt
IH
Forward "On"voltage (ITM=16A tp=380µs)
Gate Trigger Current(continuous dc)
(VAK=12Vdc,RL=140Ω)
Gate Trigger Voltage (continuous dc)
(VAK=12Vdc,RL=140Ω)
Gate threshold Voltage
(VD=12VDRM RL=3.3KΩ RGK=220Ω)
Critical Rate of Rise Off-State Voltage
(VD=0.67VDRM; RGK=220Ω)
Holding Current(VD=12V;IGT=0.5mA)
(Note2.1) -
1.2 1.6
V
-
(Note2.2)
-
200 μA
-
-
(Note2.2)
0.1
-
(Note2.1)
TJ=125℃
5
-
0.8
V
-
V
-
V/㎲
-
2
5
mA
IL
Latching Current(VD=12V;IGT=0.5mA)
-
2
6
mA
Rd
Dynamic resistance
TJ=125℃
-
-
46
mΩ
*Notes:
2.1 Pulse Width ≤1.0ms,Duty cycle≤1%
2.2 RGK Current is not Included in measurement.
2/5
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