WCD8C60S Datasheet, PDF (1/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – Sensitive Gate Silicon Controlled Rectifiers

WCD8C60S
Sensitive Gate
Silicon Controlled Rectifiers
Features
� Sensitive gate trigger current:IGT=200µA maximum
� Low On-State Voltage :VTM=1.2(typ.) @ ITM)
� Low reverse and forward blocking current:
IDRM/IRRM=1mA@TC=125℃
� Low holding current :IH=5mA maximum
General Description
Sensitive gate triggering SCR is suitable for the application where gate
current limited such as microcontrollers, logic integrated circuits,small
motor control, gate driver for large SCR,sensing and detecting
circuits.general purpose switching and phase control applications
Absolute Maximum Ratings (TJ= 25°C unless otherwise specified)
Symbol
VDRM/VRRM
IT(AV)
IT(RMS)
ITSM
I²t
Parameter
Repetitive Peak Off-State Voltage
Average On-State Current(180° Conduction Angle)
R.M.S On-State Current(180° Conduction Angle)
Non Repetitive Surge Peak on-state Current
I²t Valuefor Fusing
(Note(1)
TI =110 °C
TI =110 °C
tp=8.3ms
tp=10ms
tp=10ms
Value
600
5
8
73
70
24.5
Units
V
A
A
A
A²s
Critical rate of rise of on-state current
di/dt
ITM=2A;IG=10mA; dIG/dt=100A/µs
TJ=125 °C
50
A/㎲
PG(AV)
Average Gate Power Dissipation
TJ=125 °C
1
W
IFGM
Peak Gate Current
TJ=125 °C
4
A
VRGM
Reverse Peak Gate Voltage
TJ=125 °C
5
V
TJ
Junction Temperature
-40~125
°C
TSTG
Storage Temperature
-40~150
°C
Note1:Although not recommended,off-state Voltages up to 800V may be applied without damage,but the thyristor may
switch to the on-stage.The rate of rise of current should not exceed15A/µs.
Thermal Characteristics
Symbol
Parameter
RθJc
Thermal Resistance Junction to Case
RθJA
Thermal Resistance Junction to Ambient
Value
Units
Min Typ Max
-
-
20 ℃/W
-
-
70 ℃/W
Rev.A Oct.2010
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