W29EE012 Datasheet, PDF (9/19 Pages) Winbond – 128K X 8 CMOS FLASH MEMORY

W29EE012
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
RATING
UNIT
Power Supply Voltage to VSS Potential
Operating Temperature
Storage Temperature
D.C. Voltage on Any Pin to Ground Potential Except #OE
Transient Voltage (≤20 nS) on Any Pin to Ground Potential
Voltage on #OE Pin to Ground Potential
-0.5 to +7.0
V
0 to +70
°C
-65 to +150
°C
-0.5 to VDD +1.0
V
-1.0 to VDD +1.0
V
-0.5 to 12.5
V
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability
of the device.
Operating Characteristics
(VDD = 5.0V ±10%, VSS = 0V, TA = 0 to 70° C)
PARAMETER SYM.
TEST CONDITIONS
Power Supply
Current
Standby VDD Current
(TTL input)
Standby VDD Current
(CMOS input)
Input Leakage
Current
Output Leakage
Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
ICC #CE = #OE = VIL, #WE = VIH,
all I/Os open
Address inputs = VIL/VIH,
at f = 5 MHz
ISB1 #CE = VIH, all I/Os open
Other inputs = VIL/VIH
ISB2 #CE = VDD -0.3V, all I/Os open
Other inputs = VDD -0.3V/GND
ILI VIN = GND to VDD
ILO VIN = GND to VDD
VIL
-
VIH
-
VOL IOL = 2.1 mA
VOH IOH = -0.4 mA
MIN.
-
LIMITS
TYP.
-
MAX.
50
UNIT
mA
-
2
3
mA
-
20
100
µA
-
-
1
µA
-
-
10
µA
-0.3
-
0.8
V
2.0
- VDD +0.5 V
-
-
0.45
V
2.4
-
-
V
Power-up Timing
PARAMETER
Power-up to Read Operation
Power-up to Write Operation
SYMBOL
TPU.READ
TPU.WRITE
TYPICAL
100
5
UNIT
µS
mS
Publication Release Date: March 26, 2002
-9-
Revision A3