W29EE012 Datasheet, PDF (19/19 Pages) Winbond – 128K X 8 CMOS FLASH MEMORY

W29EE012
VERSION HISTORY
VERSION
A1
A2
A3
DATE
Jan. 1997
Apr. 2000
Mar. 26, 2002
PAGE
DESCRIPTION
-
Initial Issued
10
Modify VIH/VIL = 0V/3V and VOH/VOL = 1.5V/1.5V
1, 17, 19, 20 Delete Package Description
1,11
Delete Access Time
4, 17
Add in Hardware SID Read function note
4
Modify VDD Power Up/Down Detection in Hardware
Data Protection
18
Add Bonding Pad Diagram
Headquarters
No. 4, Creation Rd. III,
Science-Based Industrial Park,
Hsinchu, Taiwan
TEL: [phone]
FAX: [phone]
http://www.winbond.com.tw/
Taipei Office
9F, No.480, Rueiguang Rd.,
Neihu Chiu, Taipei, 114,
Taiwan, R.O.C.
TEL: [phone]
FAX: [phone]
Winbond Electronics Corporation America
2727 North First Street, San Jose,
CA 95134, U.S.A.
TEL: [phone]
FAX: [phone]
Winbond Electronics (Shanghai) Ltd.
27F, 2299 Yan An W. Rd. Shanghai,
200336 China
TEL: [phone]
FAX: [phone]
Winbond Electronics Corporation Japan
7F Daini-ueno BLDG, 3-7-18
Shinyokohama Kohoku-ku,
Yokohama, 222-0033
TEL: [phone]
FAX: [phone]
Winbond Electronics (H.K.) Ltd.
Unit 9-15, 22F, Millennium City,
No. 378 Kwun Tong Rd.,
Kowloon, Hong Kong
TEL: [phone]
FAX: [phone]
Please note that all data and specifications are subject to change without notice.
All the trade marks of products and companies mentioned in this data sheet belong to their respective owners.
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Publication Release Date: March 26, 2002
Revision A3