W29C102 Datasheet, PDF (9/21 Pages) Winbond – 64K 16 CMOS FLASH MEMORY

W29C102
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
RATING
UNIT
Power Supply Voltage to Vss Potential
-0.5 to +7.0
V
Operating Temperature
0 to +70
°C
Storage Temperature
-65 to +150
°C
D.C. Voltage on Any Pin to Ground Potential except OE
-0.5 to VDD +1.0
V
Transient Voltage (<20 nS ) on Any Pin to Ground Potential
-1.0 to VDD +1.0
V
Voltage on A9 and OE Pin to Ground Potential
-0.5 to 12.5
V
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the
device.
DC Operating Characteristics
(VDD = 5.0V ±10%, VSS = 0V, TA = 0 to 70° C)
PARAMETER
SYM.
TEST CONDITIONS
Power Supply Current ICC _{CE=OE= VIL, WE= VIH, all I/Os open}
Address inputs = VIL/VIH, at f = 5 MHz
Standby VDD Current
(TTL input)
ISB1 _{CE = VIH, all I/Os open}
Other inputs = VIL/VIH
Standby VDD Current
(CMOS input)
ISB2 _{CE = VDD -0.3V, all I/Os open}
Other inputs = VDD -0.3V/GND
Input Leakage
Current
ILI VIN = GND to VDD
Output Leakage
Current
ILO VOUT = GND to VDD
Input Low Voltage
VIL
-
Input High Voltage
VIH
-
Output Low Voltage VOL IOL = 2.1 mA
Output High Voltage VOH IOH = -0.4 mA
Output High Voltage VOH2 IOH = -100 µA; VCC = 4.5V
CMOS
LIMITS
UNIT
MIN. TYP. MAX.
-
25 60 mA
-
2
3 mA
-
20 200 µA
-
-
10 µA
-
-
10 µA
-
- 0.8 V
2.0 -
-
V
-
- 0.45 V
2.4 -
-
V
4.2 -
-
V
Publication Release Date: March 1998
-9-
Revision A3