W29C011A Datasheet, PDF (9/19 Pages) Winbond – 128K X 8 CMOS FLASH MEMORY

Preliminary W29C011A
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
RATING
UNIT
Power Supply Voltage to Vss Potential
-0.5 to +7.0
V
Operating Temperature
0 to +70
°C
Storage Temperature
-65 to +150
°C
D.C. Voltage on Any Pin to Ground Potential except OE
-0.5 to VDD +1.0
V
Transient Voltage (¡Õ20 nS ) on Any Pin to Ground Potential
-1.0 to VDD +1.0
V
Voltage on OE Pin to Ground Potential
-0.5 to 12.5
V
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the
device.
Operating Characteristics
(VDD = 5.0V ±10%, VSS = 0V, TA = 0 to 70° C)
PARAMETER SYM.
TEST CONDITIONS
Power Supply
Current
ICC _{CE = OE = VIL, WE = VIH,}
all I/Os open
Address inputs = VIL/VIH,
at f = 5 MHz
Standby VDD
Current (TTL input)
ISB1 _{CE = VIH, all I/Os open}
Other inputs = VIL/VIH
Standby VDD Current ISB2 _{CE = VDD -0.3V, all I/Os open}
(CMOS input)
Other inputs = VDD -0.3V/GND
Input Leakage
Current
ILI VIN = GND to VDD
Output Leakage
Current
ILO VIN = GND to VDD
Input Low Voltage
VIL
-
Input High Voltage VIH
-
Output Low Voltage VOL IOL = 2.1 mA
Output High Voltage VOH IOH = -0.4 mA
MIN.
-
LIMITS
TYP.
-
MAX.
50
UNIT
mA
-
2
3
mA
-
20
100
µA
-
-
1
µA
-
-
10
µA
-0.3
-
0.8
V
2.0
- VDD +0.5 V
-
-
0.45
V
2.4
-
-
V
Power-up Timing
PARAMETER
Power-up to Read Operation
Power-up to Write Operation
SYMBOL
TPU.READ
TPU.WRITE
TYPICAL
100
5
UNIT
µS
mS
Publication Release Date: December 1997
-9-
Revision A1