W25Q64DW Datasheet, PDF (70/82 Pages) Winbond – 1.8V 64M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI

W25Q64DW
11.4 DC Electrical Characteristics
PARAMETER
SYMBOL CONDITIONS
Input Capacitance
Output Capacitance
Input Leakage
I/O Leakage
Standby Current
CIN(1)
Cout⁽¹⁾
ILI
ILO
ICC1
Power-down Current
ICC2
Current Read Data /
Dual /Quad 1MHz⁽²⁾
Current Read Data /
Dual /Quad 50MHz⁽²⁾
Current Read Data /
Dual /Quad 80MHz⁽²⁾
Current Read Data /
Dual Output Read/Quad
Output Read 104MHz⁽²⁾
Current Write Status
Register
Current Page Program
Current Sector/Block
Erase
Current Chip Erase
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
ICC3
ICC3
ICC3
ICC3
ICC4
ICC5
ICC6
ICC7
VIL
VIH
VOL
VOH
VIN = 0V⁽¹⁾
VOUT = 0V⁽¹⁾
/CS = VCC,
VIN = GND or VCC
/CS = VCC,
VIN = GND or VCC
C = 0.1 VCC / 0.9 VCC
DO = Open
C = 0.1 VCC / 0.9 VCC
DO = Open
C = 0.1 VCC / 0.9 VCC
DO = Open
C = 0.1 VCC / 0.9 VCC
DO = Open
/CS = VCC
/CS = VCC
/CS = VCC
/CS = VCC
IOL = 100 µA
IOH = –100 µA
SPEC
MIN
TYP
MAX
6
8
±2
±2
10
40
1
20
15
20
30
40
8
12
20
25
20
25
20
25
–0.5
VCC x 0.3
VCC x 0.7
VCC + 0.4
0.2
VCC – 0.2
Notes:
1. Tested on sample basis and specified through design and characterization data. TA = 25° C, VCC = 1.8V.
2. Checker Board Pattern.
UNIT
pF
pF
µA
µA
µA
µA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
- 70 -